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Proceedings Paper

Analysis of optical gain of GaInNAs/GaAs compressive strained quantum well lasers
Author(s): Weijun Fan; Soon Fatt Yoon; Ming Fu Li; Tow Chong Chong
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Paper Abstract

The electronics structures of the Ga1-xINxNyAs1-y/GaAs compressive strained quantum wells(QWs) are investigated using 6x6 kxp Hamiltonian including the heavy hole, light hole and spin-orbit splitting band. By varying the well width and mole fraction of N in the well material, the effects of quantum confinement and compressive strain are examined. The curves of dependence of transition energy on well width and N mole fraction are obtained. The valence subband energy dispersion curves, density of states, TE and TM squared optical transition matrix elements and optical gain spectra of three possible quantum well structures for emitting 1.3micrometers wavelength are given.

Paper Details

Date Published: 19 October 2001
PDF: 6 pages
Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); doi: 10.1117/12.444946
Show Author Affiliations
Weijun Fan, Nanyang Technological Univ. (Singapore)
Soon Fatt Yoon, Nanyang Technological Univ. (Singapore)
Ming Fu Li, National Univ. of Singapore (Singapore)
Tow Chong Chong, National Univ. of Singapore (Singapore)

Published in SPIE Proceedings Vol. 4580:
Optoelectronics, Materials, and Devices for Communications
Tien Pei Lee; Qiming Wang, Editor(s)

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