In this paper, diamond film is deposited at low substrate temperature by electron-assisted chemical vapor deposition (EACVD). The quality of diamond film is analyzed by the scanning electron microscope (SEM), Raman spectrum and x-ray diffraction (XRD). The results show that the high quality film of (111) orientation is deposited at low temperature of about 500 degree(s)C by the EACVD technique. Meanwhile, the mechanism of the deposition at low temperature is also discussed.

Date Published: 19 October 2001
PDF: 4 pages
Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); doi: 10.1117/12.444935

Published in SPIE Proceedings Vol. 4580:
Optoelectronics, Materials, and Devices for Communications
Tien Pei Lee; Qiming Wang, Editor(s)