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Proceedings Paper

High-efficiency dual-band power amplifier for radar applications
Author(s): Denis A. Masliah; Bradley S. Cole; Aryeh Platzker; Manfred Schindler
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Paper Abstract

A two-stage Gallium Arsenide (GaAs) monolithic power amplifier has been developed. The main features of the amplifier are the coverage of two distinct frequency bands, X-band and Ku-band; high power output of 800 mW at 2 dB compression at 85 C, and high efficiency, 14 to 20 percent at 85 C. The circuit includes on-chip biasing accessible from both sides of the circuit and is stable under any combination of input/output loads attainable with standard tuners. The amplifier measures 0.109 by 0.120 in. and was fabricated with standard ion-implanted, 0.5 micron gate length MESFETs.

Paper Details

Date Published: 1 July 1991
PDF: 8 pages
Proc. SPIE 1475, Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems, (1 July 1991); doi: 10.1117/12.44486
Show Author Affiliations
Denis A. Masliah, Raytheon Co. (United States)
Bradley S. Cole, Raytheon Co. (United States)
Aryeh Platzker, Raytheon Co. (United States)
Manfred Schindler, Raytheon Co. (United States)

Published in SPIE Proceedings Vol. 1475:
Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems
Regis F. Leonard; Kul B. Bhasin, Editor(s)

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