Proceedings Paper
Advances in power MMIC amplifier technology in space communications| Format | Member Price | Non-Member Price |
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Paper Abstract
Advances in microwave and millimeter-wave power monolithic amplifier technology are reviewed. Device structures and circuit topologies that enhance the efficiency of monolithic power amplifiers for space communication applications are discussed. Mature GaAs MESFETs as well as emerging III-V heterostructure field-effect and bipolar transistors designed for high-efficiency operation are covered. Relative merits of various types of devices for implementation in high performance monolithic amplifiers are discussed.
Paper Details
Date Published: 1 July 1991
PDF: 12 pages
Proc. SPIE 1475, Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems, (1 July 1991); doi: 10.1117/12.44482
Published in SPIE Proceedings Vol. 1475:
Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems
Regis F. Leonard; Kul B. Bhasin, Editor(s)
PDF: 12 pages
Proc. SPIE 1475, Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems, (1 July 1991); doi: 10.1117/12.44482
Show Author Affiliations
Hua Quen Tserng, Texas Instruments Inc. (United States)
Paul Saunier, Texas Instruments Inc. (United States)
Published in SPIE Proceedings Vol. 1475:
Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems
Regis F. Leonard; Kul B. Bhasin, Editor(s)
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