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Proceedings Paper

Metallic oxide semiconductor field effect-transistor array-compound-type gas chemical microsensor
Author(s): Huang-ping Yan; Jun Guo; Yong-jian Feng
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Paper Abstract

Metallic Oxide Semiconductor Field Effecttransistor (MOSFET) array compound type gas chemical microsensor has been developed. The device consists of three MOSFETs, a heating resistor and a diode used as temperature sensor. Two of the MOSFETs have their gates covered with thin catalytic and sensitive materials: Palladium (Pd) and Yttria-Stabilized Zirconia (YSZ) and act as hydrogen and oxygen sensitive units respectively. The third MOSFET has a standard gate covered with aluminium and acts as a reference. This paper discusses the structure, working principle and fabrication process of the device. In addition, some relevant experimental curves are presented. Analysis of characteristics of the device, such as sensitivity, stability, selectivity, temperature property and time response, has been performed. Obtained results show that the exposure to different gases causes the change of threshold voltage of each gas sensitive MOSFET. They also exhibit excellent characteristics of the device.

Paper Details

Date Published: 15 October 2001
PDF: 8 pages
Proc. SPIE 4601, Micromachining and Microfabrication Process Technology and Devices, (15 October 2001); doi: 10.1117/12.444688
Show Author Affiliations
Huang-ping Yan, Xiamen Univ. (China)
Jun Guo, Case Western Reserve Univ. (United States)
Yong-jian Feng, Xiamen Univ. (China)

Published in SPIE Proceedings Vol. 4601:
Micromachining and Microfabrication Process Technology and Devices
Norman C. Tien; Qing-An Huang, Editor(s)

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