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Proceedings Paper

InP-based three-dimensional photonic integrated circuits
Author(s): Diana Tsou; Sergey Zaytsev; Alexandre Pauchard; Steve Hummel; Yu-Hwa Lo
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Paper Abstract

Fast-growing internet traffic volumes require high data communication bandwidth over longer distances than short wavelength (850 nm) multi-mode fiber systems can provide. Access network bottlenecks put pressure on short-range (SR) telecommunication systems. To effectively address these datacom and telecom market needs, low cost, high-speed laser modules at 1310 and 1550 nm wavelengths are required. The great success of GaAs 850 nm VCSELs for Gb/s Ethernet has motivated efforts to extend VCSEL technology to longer wavelengths in the 1310 and 1550 nm regimes. However, the technological challenges associated with available intrinsic materials for long wavelength VCSELs are tremendous. Even with recent advances in this area, it is believed that significant additional development is necessary before long wavelength VCSELs that meet commercial specifications will be widely available. In addition, the more stringent OC192 and OC768 specifications for single-mode fiber (SMF) datacom may require more than just a long wavelength laser diode, VCSEL or not, to address numerous cost and performance issues. We believe that photonic integrated circuits, which compactly integrate surface-emitting lasers with additional active and passive optical components with extended functionality, will provide the best solutions to today's problems. Photonic integrated circuits (PICs) have been investigated for more than a decade. However, they have produced limited commercial impact to date primarily because the highly complicated fabrication processes produce significant yield and device performance issues. In this presentation, we will discuss a new technology platform for fabricating InP-based photonic integrated circuits compatible with surface-emitting laser technology. Employing InP transparency at 1310 and 1550 nm wavelengths, we have created 3-D photonic integrated circuits (PICs) by utilizing light beams in both surface normal and in-plane directions within the InP-based structure. This additional beam routing flexibility allows significant size reduction and process simplification without sacrificing device performance. This innovative 3-D PIC technology platform can be easily extended to create surface-emitting lasers integrated with power monitoring detectors, micro-lenses, external modulators, amplifiers, and other passive and active components. Such added functionality can produce cost--effective solutions for the highest-end laser transmitters required for datacom and short range telecom networks, as well as fiber channels and other cost and performance sensitive applications. We present results for 1310 nm photonic IC surface-emitting laser transmitters operating at 2.5 Gbps without active thermal electric cooling.

Paper Details

Date Published: 15 October 2001
PDF: 4 pages
Proc. SPIE 4600, Advances in Microelectronic Device Technology, (15 October 2001); doi: 10.1117/12.444674
Show Author Affiliations
Diana Tsou, Nova Crystals, Inc. (United States)
Sergey Zaytsev, Nova Crystals, Inc. (United States)
Alexandre Pauchard, Nova Crystals, Inc. (United States)
Steve Hummel, Nova Crystals, Inc. (United States)
Yu-Hwa Lo, Univ. of California/San Diego and Nova Crystals, Inc. (United States)

Published in SPIE Proceedings Vol. 4600:
Advances in Microelectronic Device Technology
Qin-Yi Tong; Ulrich M. Goesele, Editor(s)

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