Proceedings Paper
Techniques for characterization of silicon penetration during DUV surface imaging| Format | Member Price | Non-Member Price |
|---|---|---|
| $17.00 | $21.00 |
Paper Abstract
Techniques commonly used to determine silicon penetration depth during deep UV surface imaging lithography are compared to a method referred to as plasma etch 'staining.' This methodology is described in detail and the results compared and correlated to Rutherford Backscattering Spectroscopy (RBS) and ellipsometric (film swelling) measurements. Effects of the staining parameters on the resulting silicon depth are also discussed.
Paper Details
Date Published: 1 July 1991
PDF: 9 pages
Proc. SPIE 1464, Integrated Circuit Metrology, Inspection, and Process Control V, (1 July 1991); doi: 10.1117/12.44450
Published in SPIE Proceedings Vol. 1464:
Integrated Circuit Metrology, Inspection, and Process Control V
William H. Arnold, Editor(s)
PDF: 9 pages
Proc. SPIE 1464, Integrated Circuit Metrology, Inspection, and Process Control V, (1 July 1991); doi: 10.1117/12.44450
Show Author Affiliations
Peter Freeman, Digital Equipment Corp. (United States)
John F. Bohland, Shipley Co., Inc. (United States)
Edward K. Pavelchek, Shipley Co., Inc. (United States)
John F. Bohland, Shipley Co., Inc. (United States)
Edward K. Pavelchek, Shipley Co., Inc. (United States)
Susan K. Jones, Microelectronics Ctr. of North Carolina (United States)
Bruce W. Dudley, Microelectronics Ctr. of North Carolina (United States)
Stephen M. Bobbio, Microelectronics Ctr. of North Carolina (United States)
Bruce W. Dudley, Microelectronics Ctr. of North Carolina (United States)
Stephen M. Bobbio, Microelectronics Ctr. of North Carolina (United States)
Published in SPIE Proceedings Vol. 1464:
Integrated Circuit Metrology, Inspection, and Process Control V
William H. Arnold, Editor(s)
© SPIE. Terms of Use
