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Proceedings Paper

Critical dimension control using development end point detection for wafers with multilayer structures
Author(s): Toshiyuki Hagi; Yoshimitsu Okuda; Tohru Ohkuma
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Paper Abstract

Fiber-optic-based reflectivity measurement during spray or spray/puddle development is effective for accurate critical dimension (CD) control. However, there are some difficulties in using wafers with multilayer structures. This paper describes an improved method for end-point detection of wafers with multilayer structures which consist of 160 +/- 10 nm SiN/20 nm SiO2 /Si. The improvement has been done in the following way. (1) Variation of the film thickness in the multilayer structure was found to cause shifts of the end point and CD. (2) By choosing the optimum wavelength, the CD shift was minimized for the variation of the film thickness. (3) The optimum wavelength was determined from the reflectivity measurement on the multilayer structure. (4) Improved CD accuracy of +/- 0.02 micrometers was attained for a SiN film thickness varying from -10 nm to +10 nm relative to an average value by choosing the optimum wavelength.

Paper Details

Date Published: 1 July 1991
PDF: 7 pages
Proc. SPIE 1464, Integrated Circuit Metrology, Inspection, and Process Control V, (1 July 1991); doi: 10.1117/12.44436
Show Author Affiliations
Toshiyuki Hagi, Matsushita Electronics Corp. (Japan)
Yoshimitsu Okuda, Matsushita Electronics Corp. (Japan)
Tohru Ohkuma, Matsushita Electronics Corp. (Japan)

Published in SPIE Proceedings Vol. 1464:
Integrated Circuit Metrology, Inspection, and Process Control V
William H. Arnold, Editor(s)

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