Proceedings Paper
Half-micrometer linewidth metrology| Format | Member Price | Non-Member Price |
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Paper Abstract
This investigation studies linewidth metrology techniques and compares SEM measurement results with an electrical linewidth probe procedure. Calibration offsets between reticle, resist, etched, and electrical probe dimensions are compared for the 500-nm nominal isolated and grouped images. These individual probe-site measurements, as monitored with a low-voltage SEM through this process, are then compared to individual-site and full-field electrical data.
Paper Details
Date Published: 1 July 1991
PDF: 8 pages
Proc. SPIE 1464, Integrated Circuit Metrology, Inspection, and Process Control V, (1 July 1991); doi: 10.1117/12.44429
Published in SPIE Proceedings Vol. 1464:
Integrated Circuit Metrology, Inspection, and Process Control V
William H. Arnold, Editor(s)
PDF: 8 pages
Proc. SPIE 1464, Integrated Circuit Metrology, Inspection, and Process Control V, (1 July 1991); doi: 10.1117/12.44429
Show Author Affiliations
Stephen E. Knight, IBM Corp. (United States)
Dean C. Humphrey, IBM Corp. (United States)
Dean C. Humphrey, IBM Corp. (United States)
Reginald R. Bowley Jr., IBM Corp. (United States)
Robert M. Cogley, IBM Corp. (United States)
Robert M. Cogley, IBM Corp. (United States)
Published in SPIE Proceedings Vol. 1464:
Integrated Circuit Metrology, Inspection, and Process Control V
William H. Arnold, Editor(s)
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