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Proceedings Paper

Electric field detector using electro-optic device
Author(s): Changho Lee; Yongbae Jeon; DaeHwa Jeong; Ick-June Yune; Kwangsoo No
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Paper Abstract

The fabrication of an electric field detector using electro- optic LiNbO3 (LN) single crystal has been studied for the application to check the electric field of a conductively patterned panel. When this electric field detector moves on the surface of the panel, air gap which is close enough for the given field intensity and resolution has to be maintained constantly not to damage the patterns on the surface For the effective detection of electric field change in this air gap state, LN single crystal was selected because of the relatively high electro-optic coefficient, transmittance and low dielectric constant. X-cut LN and Z- cut LN structures were selected to estimate the applicability of LN single crystal by the simulation on the optical intensity variation and electric field distribution of the various structures. As the air gap was increased from 0 to 40 (μm) in the X-cut LN structure, half-wave voltage (Vπ) was increased from 400 to 700 (V) and optical intensity variation with unit voltage (Q) was decreased from 1.3 to 0.17. At the air gap of 10 μm in the Z-cut LN structure, (Vπ) was about 100-150 (V) and Q was 6.7 (%/V) much larger than that of the X-cut LN structure. Form these characteristics, Z-cut LN structure proved to be applicable for the electric field detector because the optical intensity variation (.08μW) was sufficient in the ac driving voltage region (±20 V) of the real system.

Paper Details

Date Published: 4 October 2001
PDF: 12 pages
Proc. SPIE 4564, Optomechatronic Systems II, (4 October 2001); doi: 10.1117/12.444101
Show Author Affiliations
Changho Lee, Korea Advanced Institute of Science and Technology (South Korea)
Yongbae Jeon, Korea Advanced Institute of Science and Technology (South Korea)
DaeHwa Jeong, LG Electronics, Inc. (South Korea)
Ick-June Yune, LG Electronics, Inc. (South Korea)
Kwangsoo No, Korea Advanced Institute of Science and Technology (South Korea)

Published in SPIE Proceedings Vol. 4564:
Optomechatronic Systems II
Hyungsuck Cho, Editor(s)

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