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Proceedings Paper

Method for testing electrostatic discharge tolerance for fingerprint sensor LSI
Author(s): Yasuyuki Tanabe; Hideyuki Unno; Katsuyuki Machida; Norio Sato; Hiromu Ishii; Satoshi Shigematsu; Hiroki Morimura; Hakaru Kyuragi
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Paper Abstract

The measurement of electrostatic discharge (ESD) tolerance for a capacitive fingerprint sensor LSI in which the sensor is stacked on a 0.5-micrometers CMOS LSI is described. To compare the contact discharge method and air discharge method, we investigated the dependence of the ESD failure voltage on the distance between the sensor surface and ESD electrode for a conventional planar-type fingerprint sensor LSI. The ESD failure voltage decreased as the electrode approached to sensor surface and reached its lowest value when the electrode touched the surface. Therefore, we conclude that the contact discharge method is more suitable for evaluating ESD tolerance for fingerprint sensor LSI because the measurement condition is clearly defined and ESD failure value is the most critical. Moreover, we revealed that our proposed sensor LSI with the grounded wall (GND wall) has high ESD tolerance of over +/- 8.0 kV by the contact discharge method.

Paper Details

Date Published: 2 October 2001
PDF: 8 pages
Proc. SPIE 4558, Reliability, Testing, and Characterization of MEMS/MOEMS, (2 October 2001); doi: 10.1117/12.442989
Show Author Affiliations
Yasuyuki Tanabe, NTT Telecommunications Energy Labs. (Japan)
Hideyuki Unno, NTT Lifestyle and Environmental Technology Labs. (Japan)
Katsuyuki Machida, NTT Telecommunications Energy Labs. (Japan)
Norio Sato, NTT Telecommunications Energy Labs. (Japan)
Hiromu Ishii, NTT Telecommunications Energy Labs. (Japan)
Satoshi Shigematsu, NTT Lifestyle and Environmental Technology Labs. (Japan)
Hiroki Morimura, NTT Lifestyle and Environmental Technology Labs. (Japan)
Hakaru Kyuragi, NTT Telecommunications Energy Labs. (Japan)

Published in SPIE Proceedings Vol. 4558:
Reliability, Testing, and Characterization of MEMS/MOEMS
Rajeshuni Ramesham, Editor(s)

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