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Proceedings Paper

Depth profiling resonance ionization mass spectrometry of electronic materials
Author(s): Stephen W. Downey; A. B. Emerson
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Paper Abstract

Resonance ionization mass spectrometry (RIMS) of neutral atoms sputtered from semiconductors is used to provide quantitative information about the major and minor constituents. If the photoionization process is demonstrated to be saturated, RIMS signals can be related to the absolute concentrations of many elements in semiconductors such as Si and GaAs. RIMS signals are demonstrated to be nearly element-independent, that is, equal concentrations of impurities such as Be, Al, and Co in Si give equivalent signals. However, partitioning into various quantum states and velocities of sputtered atoms must be considered when comparing interelement signals on an absolute basis. Three- photon ionization is shown to be useful in reducing some background ionization effects and detecting high ionization potential non-metal elements.

Paper Details

Date Published: 1 July 1991
PDF: 7 pages
Proc. SPIE 1435, Optical Methods for Ultrasensitive Detection and Analysis: Techniques and Applications, (1 July 1991); doi: 10.1117/12.44227
Show Author Affiliations
Stephen W. Downey, AT&T Bell Labs. (United States)
A. B. Emerson, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 1435:
Optical Methods for Ultrasensitive Detection and Analysis: Techniques and Applications
Bryan L. Fearey, Editor(s)

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