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Proceedings Paper

Pushing reliability limits in SiO2: an extension to gate oxide scaling
Author(s): Pradip K. Roy; Y. Chen; Sundar Chetlur
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Paper Abstract

Graded-Grown-Gate oxide involves a 2-step synthesis of growing an oxide at a temperature above the viscoelastic temperature onto a pre-grown SiO2 layer. The cooling rate is carefully modulated near Tve-925 degrees C to enhance growth induced stress relaxation. This new ultra- thin gate oxide process is manufacturable and delivers significant improvement in transistor performance and exceptional reliability. These improvements are a consequence of a planar and stress-free Si/SiO2 generated by this novel process.

Paper Details

Date Published: 25 September 2001
PDF: 11 pages
Proc. SPIE 4417, Photonics 2000: International Conference on Fiber Optics and Photonics, (25 September 2001); doi: 10.1117/12.441290
Show Author Affiliations
Pradip K. Roy, Lucent Technologies/Bell Labs. (United States)
Y. Chen, Lucent Technologies/Bell Labs. (United States)
Sundar Chetlur, Lucent Technologies/Bell Labs. (United States)

Published in SPIE Proceedings Vol. 4417:
Photonics 2000: International Conference on Fiber Optics and Photonics
S. K. Lahiri; Ranjan Gangopadhyay; Asit K. Datta; Samit K. Ray; B. K. Mathur; S. Das, Editor(s)

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