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Proceedings Paper

Surface-micromachined miniature rf switch
Author(s): Fangmin Guo; Zongsheng Lai; Ziqiang Zhu; Zhong Fan; Yongfu Long; Gen Qing Yang; Xiaohong Ge; Siqin Chen; Jianfang Xie
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Paper Abstract

A surface micromachined miniature switch has been made on silicon substrate using an electroplated gold micro-beam as the cantilevered arm, a chromium-to-gold electrical contact, and electrostatic actuation as the switching mechanism. The switch has an electrical isolation of -30dB in the 'off' state and an insertion loss of 4-7dB form 1 to 10 Ghz with a return loss of -15dB in the 'on' state. The high insertion loss has attributed to generation of parasitic current in low resistivity of the silicon substrate.

Paper Details

Date Published: 14 September 2001
PDF: 3 pages
Proc. SPIE 4414, International Conference on Sensor Technology (ISTC 2001), (14 September 2001); doi: 10.1117/12.440198
Show Author Affiliations
Fangmin Guo, East China Normal Univ. (China)
Zongsheng Lai, East China Normal Univ. (China)
Ziqiang Zhu, East China Normal Univ. (China)
Zhong Fan, East China Normal Univ. (China)
Yongfu Long, East China Normal Univ. (China)
Gen Qing Yang, Shanghai Institute of Metallurgy (China)
Xiaohong Ge, Shanghai Institute of Metallurgy (China)
Siqin Chen, Shanghai Institute of Metallurgy (China)
Jianfang Xie, Shanghai Institute of Metallurgy (China)

Published in SPIE Proceedings Vol. 4414:
International Conference on Sensor Technology (ISTC 2001)
Yikai Zhou; Shunqing Xu, Editor(s)

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