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Proceedings Paper

Reticle quality needs for advanced 193-nm lithography
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Paper Abstract

An overview will be given of the increasing reticle quality needs, based on the 193nm lithography program ongoing at IMEC, with special focus on the 100nm node. When benchmarked against high NA 248nm, 193nm offers an advantage for the 130nm node, as less aggressive resolution enhancements are required. For decreasing k1-factor, there is also a need to cope with an increasing mask error factor. The CD uniformity needs to be tightened. Likely, it is required to keep proximity effects and linearity issues on reticles under control. Extending from linewidth control to pattern fidelity, new metrology concepts are being suggested, which will allow to come-up with a quantitative result. Especially for the implementation of aggressive OPC there is a need to consider the mask quality in many more aspects then just those typically taken into account so far. This will allow an assessment of the printing performance of real reticles, taking limitations of the achieved pattern fidelity caused by the mask making process into account.

Paper Details

Date Published: 5 September 2001
PDF: 10 pages
Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); doi: 10.1117/12.438345
Show Author Affiliations
Rik M. Jonckheere, IMEC (Belgium)
Geert Vandenberghe, IMEC (Belgium)
Vincent Wiaux, IMEC (Belgium)
Staf Verhaegen, IMEC (Belgium)
Kurt G. Ronse, IMEC (Belgium)

Published in SPIE Proceedings Vol. 4409:
Photomask and Next-Generation Lithography Mask Technology VIII
Hiroichi Kawahira, Editor(s)

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