In low k1 optical-lithography generation, there is a non- linear amplification of mask critical dimension (CD) error during image transferring on a wafer. This error factor is called mask error enhancement factor (MEEF). In ArF system, it is premature to use commercialized simulation softwares and ArF resists. To evaluate the real resist system, we made a simple model that uses aerial images. Through the simulation, we calculated MEEFs for 180nm and 130nm line/space pairs in KrF resist system and compared them with experimental MEEFs to obtain the resist blur that satisfies the current experimental MEEFs. With a current KrF resist system, the resist blur is ~0.05 micrometers . In case of ArF resist system, the resist blur is a more important factor in MEEF and must be suppressed to lower than 0.05 micrometers to meet the proper process margin.

Date Published: 5 September 2001
PDF: 7 pages
Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); doi: 10.1117/12.438343

Published in SPIE Proceedings Vol. 4409:
Photomask and Next-Generation Lithography Mask Technology VIII
Hiroichi Kawahira, Editor(s)