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Proceedings Paper

New structure and method for fabricating InP/InGaAsP buried heterostructure semiconductor lasers
Author(s): Roger P. Holmstrom; Edmund Meland; William Powazinik
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Paper Abstract

A fabrication technique for semiconductor lasers in the indium phosphide materials system which offers excellent reproducibility and uniformity in active layer and lateral cladding widths using a novel photolithographic technique and self-aligned etching processes has been developed. Lasers fabricated by this technique demonstrated a record modulation bandwidth of 24 GHz and intrinsic resonance frequencies greater than 20 GHz. Mesa and active layer widths are controllable to +/- 0.10 micrometers , and regrown lateral cladding in InP widths are 0.1 to 0.2 micrometers across the entire wafer. Specific contact resistances were less than 10-5 ohm-cm2.

Paper Details

Date Published: 1 July 1991
PDF: 8 pages
Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); doi: 10.1117/12.43807
Show Author Affiliations
Roger P. Holmstrom, GTE Labs. Inc. (United States)
Edmund Meland, GTE Labs. Inc. (United States)
William Powazinik, GTE Labs. Inc. (United States)

Published in SPIE Proceedings Vol. 1418:
Laser Diode Technology and Applications III
Daniel S. Renner, Editor(s)

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