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Proceedings Paper

InGaAs/InP distributed feedback quantum-well lasers
Author(s): Henryk Temkin; Ralph A. Logan; Tawee Tanbun-Ek
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Paper Abstract

InGaAs/InP multiquantum well distributed feedback (DFB) lasers with the active layer based on either lattice matched or strained quantum wells are described. The active layer wells are placed in a carefully optimized graded index waveguide structure with very low internal loss. Buried heterostructure Fabry-Perot lasers based on these structures show low threshold current, high quantum efficiency and power output. These characteristics are to a large extent retained in distributed feedback lasers, with the DFB lasers showing mode rejection ratios as high as 50 dB and linewidths as low as 440 kHz. Transmission experiments at 1.7 Gb/s demonstrated dynamic chirp penalty a factor of 8-10 smaller than in conventional lasers.

Paper Details

Date Published: 1 July 1991
PDF: 11 pages
Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); doi: 10.1117/12.43796
Show Author Affiliations
Henryk Temkin, AT&T Bell Labs. (United States)
Ralph A. Logan, AT&T Bell Labs. (United States)
Tawee Tanbun-Ek, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 1418:
Laser Diode Technology and Applications III
Daniel S. Renner, Editor(s)

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