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Proceedings Paper

Planarizing ARs for dual-damascene processing
Author(s): Edward K. Pavelchek; Marjorie Cernigliaro; Peter Trefonas III; Amy Kwok; Suzanne Coley
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Paper Abstract

Via fill performance of AR7 (KrF anti-reflectant) and a prototype 193nm anti-reflectant were measured for 600 and 1000 nm deep vias in thermal oxide. Simple fitting functions were found which gave good agreement with experimental data (Rsq over 0.84). The most important factors were AR thickness, via duty ratio and via depth. The importance of these factors was different for the different anti-reflectants.

Paper Details

Date Published: 24 August 2001
PDF: 9 pages
Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); doi: 10.1117/12.436920
Show Author Affiliations
Edward K. Pavelchek, Shipley Co. Inc. (United States)
Marjorie Cernigliaro, Shipley Co. Inc. (United States)
Peter Trefonas III, Shipley Co. Inc. (United States)
Amy Kwok, Shipley Co. Inc. (United States)
Suzanne Coley, Shipley Co. Inc. (United States)

Published in SPIE Proceedings Vol. 4345:
Advances in Resist Technology and Processing XVIII
Francis M. Houlihan, Editor(s)

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