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Proceedings Paper

Effect of end group structures of methacrylate polymers on ArF photoresist performances
Author(s): Hikaru Momose; Shigeo Wakabayashi; Tadayuki Fujiwara; Kiyoshi Ichimura; Jun Nakauchi
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Paper Abstract

The relationship between the sensitivity of ArF photoresist and the end group structures of copolymers consisting of (beta) -hydroxy-(gamma) -butyrolactone methacrylate (HGBMA) and 2-methyl-2-adamantyl methacrylate (MadMA) was investigated. The sensitivity is strongly dependent on the kind and amount of end groups. It has been found that the copolymer with relatively non-polar end group structure has higher sensitivity than that with polar end group structure, and that the sensitivity of copolymer with end groups of methylisobutyrate and 1-octhylthio moieties showed approximately three times higher than that of copolymer with end groups of isobutyronitrile and 2-hydroxyethylthio moieties. The difference of sensitivity among these copolymers has been discussed from the view point of the change of development rate attributed to the amount of carboxylic acid groups formed in the resist film by exposure of 193nm light.

Paper Details

Date Published: 24 August 2001
PDF: 8 pages
Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); doi: 10.1117/12.436903
Show Author Affiliations
Hikaru Momose, Mitsubishi Rayon Co., Ltd. (Japan)
Shigeo Wakabayashi, Mitsubishi Rayon Co., Ltd. (Japan)
Tadayuki Fujiwara, Mitsubishi Rayon Co., Ltd. (Japan)
Kiyoshi Ichimura, Mitsubishi Rayon Co., Ltd. (Japan)
Jun Nakauchi, Mitsubishi Rayon Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 4345:
Advances in Resist Technology and Processing XVIII
Francis M. Houlihan, Editor(s)

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