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Proceedings Paper

ArF negative resist system using androsterone structure with delta-hydroxy acid for 100-nm phase shifting lithography
Author(s): Yoshiyuki Yokoyama; Takashi Hattori; Kaori Kimura; Toshihiko P. Tanaka; Hiroshi Shiraishi
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Paper Abstract

A negative resist system utilizing acid-catalyzed intramolecular esterification of (delta) -hydroxy acid has been developed for ArF phase-shifting lithography. The system is made up of an acrylate polymer with pendant structure of androsterone derivative with (delta) -hydroxy acid and a photo-acid generator. We investigated the effect of the comonomer and found that it changes the affinity of the resist polymer to the aqueous base developer. The change of the polarity of the comonomer was found to drastically affect the dissolution properties and the resolution capability. Optimization of the (delta) -hydroxy acid content and the developer concentration prevented pattern deformation such as winding lines and scum between the lines. The improved resist formulation combined with an ArF excimer-laser stepper with a phase-shifting mask produced a clearly resolved 100-nm line-and-space patterns.

Paper Details

Date Published: 24 August 2001
PDF: 9 pages
Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); doi: 10.1117/12.436901
Show Author Affiliations
Yoshiyuki Yokoyama, Hitachi Central Research Lab. (Japan)
Takashi Hattori, Hitachi Central Research Lab. (Japan)
Kaori Kimura, Hitachi Central Research Lab. (Japan)
Toshihiko P. Tanaka, Hitachi Central Research Lab. (Japan)
Hiroshi Shiraishi, Hitachi Central Research Lab. (Japan)

Published in SPIE Proceedings Vol. 4345:
Advances in Resist Technology and Processing XVIII
Francis M. Houlihan, Editor(s)

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