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Proceedings Paper

Toward 0.1-um contact hole process by using water-soluble organic overcoating material (WASOOM)-- Resist flow technology III: study on WASOOM, top flare, and etch characterization
Author(s): Jun-Sung Chun; Chang Ho Maeng; Mark R Tesauro; John L. Sturtevant; Joseph E. Oberlander; Andrew R. Romano; John P. Sagan; Ralph R. Dammel
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Paper Abstract

In our previous experiment for sub-0.15micrometers contact hole, we used water-soluble organic over-coating material (for short: WASOOM) as a barrier layer to distribute thermal stress evenly from top to bottom of contact hole resist. It is assumed that WASOOM inside a contact hole will be acting as a barrier layer (or buffer) so that overhang can be reduced. In this paper we will describe a 0.1micrometers contact hole process with well controlled DICD and good etch profile. In order to get a good WASOOM for this study, lots of water soluble polymers have been evaluated. Our methods for resist flow technique use WASOOM's property that it should not react with photoresist at high temperature. The criteria and chemistry of good WASOOM materials will be described for further study. In addition to WASOOM material, we will also explain the results of top flare by using PVP based WASOOM and appropriate etch processes. For etching characterization, we used C5F8 chemistry for the initial study and then later on it is found that there is some etch stop issue which appears related to surface carbon contamination of the etch front coming from C5F8. This surface contamination issue will be also investigated. Mixed C5F9/CF4 chemistry was introduced to make a more robust etching process. This uses the carbon polymerization of C5F8 for good etching profile and adds a small portion of CF4 to generate radical CF species which will prevent etch stop.

Paper Details

Date Published: 24 August 2001
PDF: 8 pages
Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); doi: 10.1117/12.436898
Show Author Affiliations
Jun-Sung Chun, Integrated Device Technology, Inc. (United States)
Chang Ho Maeng, Integrated Device Technology Inc. (United States)
Mark R Tesauro, Integrated Device Technology, Inc. (United States)
John L. Sturtevant, Integrated Device Technology (United States)
Joseph E. Oberlander, Clariant Corp. (United States)
Andrew R. Romano, Clariant Corp. (United States)
John P. Sagan, Clariant Corp. (United States)
Ralph R. Dammel, Clariant Corp. (United States)

Published in SPIE Proceedings Vol. 4345:
Advances in Resist Technology and Processing XVIII
Francis M. Houlihan, Editor(s)

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