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Proceedings Paper

Encapsulated inorganic resist technology applied to 157-nm lithography
Author(s): Theodore H. Fedynyshyn; Roger F. Sinta; Michael Sworin; Russell B. Goodman; Scott P. Doran; I. Sondi; Egon Matijevic
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Paper Abstract

In order to increase plasma etch selectivity in traditional single layer organic resists SiO2 nanoparticles have been added to typical 248nm resist formulations. Formulation modifications are necessary due to the dissolution acceleration effect of the particles. Surface functionalization of the nanoparticle surfaces with organic groups lessens this effect and allows the inclusion of acid labile groups. This allows for a wider formulation window and limits unexposed film thickness losses (UFTL). Both t- butyl ester groups and poly(t-butyl acrylate) have been used to achieve this effect. Encapsulated inorganic resist technology (EIRT) can be used as a single layer hard mask compatible with existing resist processing steps and replace complex and costly multilevel resist approaches. Lithogrpahic evaluations have been performed with electron beam, and with 248nm and 157nm projection systems. Greater transparency at 157nm is achieved by the addition of these materials, thus enabling the use of thicker films. High resolution imaging is demonstrated at these wavelengths.

Paper Details

Date Published: 24 August 2001
PDF: 11 pages
Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); doi: 10.1117/12.436860
Show Author Affiliations
Theodore H. Fedynyshyn, MIT Lincoln Lab. (United States)
Roger F. Sinta, MIT Lincoln Lab. (United States)
Michael Sworin, MIT Lincoln Lab. (United States)
Russell B. Goodman, MIT Lincoln Lab. (United States)
Scott P. Doran, MIT Lincoln Lab. (United States)
I. Sondi, Clarkson Univ. (United States)
Egon Matijevic, Clarkson Univ. (United States)

Published in SPIE Proceedings Vol. 4345:
Advances in Resist Technology and Processing XVIII
Francis M. Houlihan, Editor(s)

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