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Proceedings Paper

193-nm single-layer resist materials: total consideration of design, physical properties, and lithographic performances on all major alicyclic platform chemistries
Author(s): Toru Kajita; Yukio Nishimura; Masafumi Yamamoto; Hiroyuki Ishii; A. Soyano; A. Kataoka; Mark Slezak; Makoto Shimizu; Pushkara Rao Varanasi; G. Jordahamo; Margaret C. Lawson; R. Chen; William R. Brunsvold; Wenjie Li; Robert D. Allen; Hiroshi Ito; Hoa D. Truong; Thomas I. Wallow
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Paper Abstract

The objective of this report will be to clarify the maturity of the current 193 SLR materials. We are going to report on all major platform chemistries, i.e.,(meth) acrylate system, ROMP system, cyclic olefin addition system, cyclic olefin/maleic anhydride system, vinyl ether/maleic anhydride system, and cyclyzed system at the same time. We are going to discuss maturity of each platform from several viewpoints such as polymerization process, physical properties of the resins, lithographic performances of the resists, and process latitude of the resists including etch performances. We are also referring to several critical issues such as etch resistance, surface roughness after etch, line slimming, etc. Three major platform chemistries, (meth)acrylate, COMA, and addition, are selected in order to cover the whole spectra of layer requirements. Those three systems respectively show characteristics lithographic performances.

Paper Details

Date Published: 24 August 2001
PDF: 13 pages
Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); doi: 10.1117/12.436833
Show Author Affiliations
Toru Kajita, JSR Corp. (Japan)
Yukio Nishimura, JSR Corp. (Japan)
Masafumi Yamamoto, JSR Corp. (Japan)
Hiroyuki Ishii, JSR Corp. (Japan)
A. Soyano, JSR Corp. (Japan)
A. Kataoka, JSR Corp. (Japan)
Mark Slezak, JSR Microelectronics, Inc. and JSR Electronics NV (United States)
Makoto Shimizu, JSR Electronics NV (Japan)
Pushkara Rao Varanasi, IBM Microelectronics Div. (United States)
G. Jordahamo, IBM Microelectronics Div. (United States)
Margaret C. Lawson, IBM Microelectronics Div. (United States)
R. Chen, IBM Microelectronics Div. (United States)
William R. Brunsvold, IBM Microelectronics Div. (United States)
Wenjie Li, IBM Microelectronics Div. (United States)
Robert D. Allen, IBM Almaden Research Ctr. (United States)
Hiroshi Ito, IBM Almaden Research Ctr. (United States)
Hoa D. Truong, IBM Almaden Research Ctr. (United States)
Thomas I. Wallow, IBM Almaden Research Ctr. (United States)

Published in SPIE Proceedings Vol. 4345:
Advances in Resist Technology and Processing XVIII
Francis M. Houlihan, Editor(s)

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