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Proceedings Paper

Simulation of 193-nm photoresists based on different polymer platforms
Author(s): Doris Kang; Stewart A. Robertson; Edward K. Pavelchek
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Paper Abstract

Chemically amplified resist models for Shipley 193nm resists S6 and V2 were developed for use with commercial lithographic modeling software. S6 and V2 are based on methacrylate and vinyl ether/maleic anhydride polymer platforms, respectively, and contain an onium salt photoacid generator and proprietary base quencher. Fundamental parameters for these resists were determined experimentally and subsequently tuned to establish valid models. Current modeling algorithms appear sufficient to predict the lithographic behavior of typical features of interest. Experimental measurements that indicate that these 2 resists are similar with respect to acid photogeneration efficiency (0.04 cm2/mJ), polymer deprotection rate constant (0.05- 0.1 l/s), and developer selectivity. However, S6 exhibits greater transparency (0.35 1/micrometers vs. 0.5 1/micrometers for V2), lower acid diffusion, and greater surface inhibition. V2 exhibits considerably smoother dissolution.

Paper Details

Date Published: 24 August 2001
PDF: 9 pages
Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); doi: 10.1117/12.436818
Show Author Affiliations
Doris Kang, Shipley Co. Inc. (United States)
Stewart A. Robertson, Shipley Co. Inc. (United States)
Edward K. Pavelchek, Shipley Co. Inc. (United States)

Published in SPIE Proceedings Vol. 4345:
Advances in Resist Technology and Processing XVIII
Francis M. Houlihan, Editor(s)

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