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Proceedings Paper

Inspectability study of advanced photomasks with OPC structures
Author(s): Michael Cross; Kaustuve Bhattacharyya
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Paper Abstract

In the effort to extend the life of a technology node, reticle enhancement techniques are utilized extensively. The inspectability of advanced photomasks becomes increasingly difficult as OPC (Optical Proximity Correction) structures are incorporated in the mask design. OPC structures, such as serifs and sub-resolution assist features, are sub-specification (below the defined specification) geometries for the inspection tool. This makes it difficult to maintain high sensitivity on contamination inspection, while not detecting these OPC structures as false defects. Mask inspection can be broken down into two categories: pattern integrity and contamination, the latter of which is the topic of this paper.

Paper Details

Date Published: 22 August 2001
PDF: 5 pages
Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, (22 August 2001); doi: 10.1117/12.436799
Show Author Affiliations
Michael Cross, IBM Microelectronics (United States)
Kaustuve Bhattacharyya, KLA-Tencor Corp. (United States)

Published in SPIE Proceedings Vol. 4344:
Metrology, Inspection, and Process Control for Microlithography XV
Neal T. Sullivan, Editor(s)

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