Proceedings Paper
Enhancing the rules for optical proximity correction to improve process latitude| Format | Member Price | Non-Member Price |
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Paper Abstract
This work describes how rules for optical proximity correction, derived from lithography simulation, can be favorably changed to improve process latitudes through a metric called a dense-isolated focus/exposure matrix. Example calculations are given to demonstrate the derivation of amended rules.
Paper Details
Date Published: 22 August 2001
PDF: 6 pages
Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, (22 August 2001); doi: 10.1117/12.436788
Published in SPIE Proceedings Vol. 4344:
Metrology, Inspection, and Process Control for Microlithography XV
Neal T. Sullivan, Editor(s)
PDF: 6 pages
Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, (22 August 2001); doi: 10.1117/12.436788
Show Author Affiliations
Brian Martin, Mitel Semiconductor (United Kingdom)
Graham G. Arthur, Rutherford Appleton Lab. (United Kingdom)
Published in SPIE Proceedings Vol. 4344:
Metrology, Inspection, and Process Control for Microlithography XV
Neal T. Sullivan, Editor(s)
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