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Proceedings Paper

Gauge control for sub-170-nm DRAM product features
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Paper Abstract

As modern circuit architecture features steadily decrease in size, more accurate tools are needed to meaningfully measure critical dimensions (CD). As a general rule, a metrology tool should be able to measure 1/10 of the product tolerance. As CD's continue to shrink, gauge control becomes more relevant. The trend is illustrated in Table 1. The standard in-line critical dimension measurement tool is the top-down scanning electron microscope (SEM). An emergine technology for high speed, high accuracy CD measurement is scatterometry. This paper will compare the two technologies for in-line CD measurement for three applications: A product etch step (assessing gauge capability as well as trending), a product resist step (trending), and lithographic cell monitors (trending).

Paper Details

Date Published: 22 August 2001
PDF: 8 pages
Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, (22 August 2001); doi: 10.1117/12.436754
Show Author Affiliations
Neal Lafferty, Rochester Institute of Technology (United States)
Christopher J. Gould, Infineon Technologies Corp. (United States)
Michael E. Littau, Accent Optical Technologies, Inc. (United States)
Christopher J. Raymond, Accent Optical Technologies, Inc. (United States)

Published in SPIE Proceedings Vol. 4344:
Metrology, Inspection, and Process Control for Microlithography XV
Neal T. Sullivan, Editor(s)

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