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Proceedings Paper

Innovative techniques for automatic multi-CD-SEM image quality monitoring and matching
Author(s): Haiqing Zhou; Chih-Yu Wang; Joseph P. Pratt
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Paper Abstract

As semiconductor devices continue to shrink, precision and stability for the CD-SEM has become increasingly important. Given today's critical dimension (CD) measurements for DUV and sub-DUV process control and development. In particular: maintenance and monitoring of tight tolerances for, tool-to-tool, and across-fab CD-SEM matching have quickly become mandatory for chip manufacturing and development. KLA-Tencor continues to improve its measurement precision and tool automation capabilities for its 8XXX CD-SEM. For 0.25um processes and larger, current tool monitoring procedures are sufficient; however, for processes smaller than 0.25um, the demand for better system monitoring has become increasingly critical especially in multiple CD-SEM matching. In this paper, we incorporated the KLA-Tencor 8XXX CD-SEM Pattern Qualification Confirmation (PQC) for automated monitoring of CD-SEM image quality. Furthermore, we characterized patterned and etched wafers on a Polysilicon substrate. The characterization of electron-beam induced CD growth on various size line widths and pitches will be reported. From the results, we will determine the optimal substrate and pitch size for long-term CD monitoring of CD-SEM.

Paper Details

Date Published: 22 August 2001
PDF: 10 pages
Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, (22 August 2001); doi: 10.1117/12.436726
Show Author Affiliations
Haiqing Zhou, Texas Instruments Inc. (United States)
Chih-Yu Wang, KLA-Tencor Corp. (United States)
Joseph P. Pratt, KLA-Tencor Corp. (United States)

Published in SPIE Proceedings Vol. 4344:
Metrology, Inspection, and Process Control for Microlithography XV
Neal T. Sullivan, Editor(s)

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