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Proceedings Paper

From compliance to control: off-roadmap metrology for low-k1 lithography
Author(s): Christopher P. Ausschnitt
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Paper Abstract

The need for high-resolution metrology to verify lithography compliance with shrinking CD and overlay specifications has resulted in a variety of roadmap sanctioned approaches; notably, SEM, AFM and scatterometry. The application of optical microscopy has been relegated to overlay metrology. While high-resolution metrology is essential to the setup and qualification of lithographic processes, it is often ill suited to the demands of dynamic lithography control. The path to improved CD compliance is through improved on- produce dose and focus control. In control applications, enhanced sensitivity to what we are trying to control becomes a new handle on precision-to-tolerance. Sensitivity must be accompanied by ease of setup, speed and sampling. Modeling for correctable components of variation becomes an integral part of the metrology function. We show that the old dog optical microscopy can learn new tricks to encompass the control of dose and focus. In doing so it becomes the lead candidate for an integrated metrology solution.

Paper Details

Date Published: 22 August 2001
PDF: 11 pages
Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, (22 August 2001); doi: 10.1117/12.436719
Show Author Affiliations
Christopher P. Ausschnitt, IBM Advanced Semiconductor Technology Ctr. (United States)

Published in SPIE Proceedings Vol. 4344:
Metrology, Inspection, and Process Control for Microlithography XV
Neal T. Sullivan, Editor(s)

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