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Proceedings Paper

Infinitely selective repair buffer for EUVL reticles
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Paper Abstract

The three-layer absorber stack for EUVL reticles currently consists of an absorber, repair buffer and etch stop layers. The repair buffer should exhibit high etch selectivity during the absorber etch processes (i.e. pattern transfer and focused ion beam (FIB) repair), be thermally and electrically conductive, optimally thin and have high etch selectivity to the silicon-capping layer over the Mo/Si multi-layer mirror. The absorber materials that have been studied in the past are TaSiN and Cr with SiON as the repair buffer on top of a Cr etch stop layer. The SiON repair buffer is insulating, exhibiting low thermal and electrical conductivity. Also, the required thickness for FIB repair is greater than 750 Angstroms using a standard 30-keV Ga+ FIB tool, while the etch selectivity to the silicon capping layer during pattern transfer is less than five to one necessitating a Cr etch stop. A sputtered carbon repair buffer exhibiting the required qualities has been studied. The carbon film is thermally and electrically conductive and exhibits extremely high reactive ion etch selectivity to the silicon-capping layer. Carbon also has the lowest sputter yield out of all the elements opening a larger FIB repair process window without using gas-assisted etching. A conductive repair buffer also prevents the possibility of static charge buildup on the mask that could damage patterns during an electrostatic discharge.

Paper Details

Date Published: 20 August 2001
PDF: 7 pages
Proc. SPIE 4343, Emerging Lithographic Technologies V, (20 August 2001); doi: 10.1117/12.436667
Show Author Affiliations
James R. Wasson, Motorola (United States)
Ken H. Smith, Motorola (United States)
Pawitter J. S. Mangat, Motorola (United States)
Scott Daniel Hector, Motorola (United States)

Published in SPIE Proceedings Vol. 4343:
Emerging Lithographic Technologies V
Elizabeth A. Dobisz, Editor(s)

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