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Proceedings Paper

Vacuum delay effect of CAR in mask fabrication
Author(s): Chang-Hwan Kim; Chan-Uk Jeon; Sung-Jae Han; Won-Il Cho; Seong-Woon Choi; Woo-Sung Han; Jung-Min Sohn
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Paper Abstract

Delay effects were evaluated for various chemically amplified resist (CAR) types in view of exposure conditions, vacuum and atmosphere. Since the mask is exposed in the vacuum chamber for a long period of time, unexpected phenomenon has been emerging in CAR such as pattern degradation, line width variation owing to vacuum delay effect (VDE). In the acetal resist based on ethyl vinyl ether (EVE), the VDE emerges as space CD decrease, while post exposure delay (PED) in an optical process shows space CD increase. Acrylate resist and modified acetal resist are superior in VDE as well as PED to EVE resist. VDE seems to be caused by out-gassing. It can be overcome by choosing out-gassing free chemistry such as acrylate and modified acetal. An over-coating method was evaluated to prevent any volatile materials in CAR from being evaporated in the vacuum, but it is disclosed ineffective to VDE. CAR linearity reaches to 0.2micrometers , and its resist and Cr pattern as well as OPC was equivalent to current e-beam resist, ZEP7000. Finally, we can have achieve 8.3nm CD non- uniformity in 3(sigma) in 135*135 mm2 area that allows beyond 0.13micrometers device mask application.

Paper Details

Date Published: 20 August 2001
PDF: 9 pages
Proc. SPIE 4343, Emerging Lithographic Technologies V, (20 August 2001); doi: 10.1117/12.436658
Show Author Affiliations
Chang-Hwan Kim, Samsung Electronics Co., Ltd. (South Korea)
Chan-Uk Jeon, Samsung Electronics Co., Ltd. (South Korea)
Sung-Jae Han, Samsung Electronics Co., Ltd. (South Korea)
Won-Il Cho, Samsung Electronics Co., Ltd. (South Korea)
Seong-Woon Choi, Samsung Electronics Co., Ltd. (South Korea)
Woo-Sung Han, Samsung Electronics Co., Ltd. (South Korea)
Jung-Min Sohn, Samsung Electronics Co., Ltd. (South Korea)

Published in SPIE Proceedings Vol. 4343:
Emerging Lithographic Technologies V
Elizabeth A. Dobisz, Editor(s)

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