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Proceedings Paper

High-performance e-beam resist coupling excellent dry etch resistance and sub-100-nm resolution for advanced mask and device making
Author(s): Wu-Song Huang; Ranee W. Kwong; Wayne M. Moreau; Robert Lang; Christopher F. Robinson; David R. Medeiros; Karen E. Petrillo; Ari Aviram; Arpan P. Mahorowala; Marie Angelopoulos; Christopher Magg; Mark Lawliss; Thomas B. Faure
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Paper Abstract

Recently, there is significant interest in using CA resists for electron beam (E-Beam) applications including mask making, direct write, and projection printing. CA resists provide superior lithographic performance in comparison to traditional non CA E-beam resists in particular high contrast, resolution, and sensitivity. However, most current CA resists exhibit very large sensitivity to PAB and/or PEB temperatures resulting in significant impact on CD control. In addition, image collapse issues associated with high aspect ratio patterning as well as electron scattering effects in low KeV tools necessitate thinner resists. Therefore, there is a need to have a high etch resistant resist system that can withstand the demanding chrome etch process. Previously, we reported on the KRS-XE resist which exhibits dry etch resistance surpassing the industry standard, novolak, in the chrome etch process. This new resist also exhibits excellent lithographic performance - 75 nm lines/space and 55nm/110 space/lines delineated and requires no PEB. This paper will highlight the lithographic and etch performance of this new resist.

Paper Details

Date Published: 20 August 2001
PDF: 10 pages
Proc. SPIE 4343, Emerging Lithographic Technologies V, (20 August 2001); doi: 10.1117/12.436656
Show Author Affiliations
Wu-Song Huang, IBM Microelectronics (United States)
Ranee W. Kwong, IBM Microelectronics (United States)
Wayne M. Moreau, IBM Microelectronics (United States)
Robert Lang, IBM Microelectronics (United States)
Christopher F. Robinson, IBM Microelectronics (United States)
David R. Medeiros, IBM Thomas J. Watson Research Ctr. (United States)
Karen E. Petrillo, IBM Thomas J. Watson Research Ctr. (United States)
Ari Aviram, IBM Thomas J. Watson Research Ctr. (United States)
Arpan P. Mahorowala, IBM Thomas J. Watson Research Ctr. (United States)
Marie Angelopoulos, IBM Thomas J. Watson Research Ctr. (United States)
Christopher Magg, IBM Microelectronics Div. (United States)
Mark Lawliss, IBM Microelectronics Div. (United States)
Thomas B. Faure, IBM Microelectronics Div. (United States)

Published in SPIE Proceedings Vol. 4343:
Emerging Lithographic Technologies V
Elizabeth A. Dobisz, Editor(s)

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