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Proceedings Paper

Laterally movable gate FET (LMGFET) for on-chip integration of MEMS with electronics
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Paper Abstract

Operation of a new device structure called Laterally Movable Gate Field Effect Transistor (LMGFET) is reported here. The device drain current changes linearly with lateral gate motion. A prototype test device was designed and fabricated in our laboratory. A novel three-mask LIGA compatible process was used for device fabrication. A comb drive structure was used to drive the movable gate. On the unoptimized test device, static sensitivity to gate position of 6.4 A/m was observed in saturation with zero gate to source voltage. For the ac drive voltage on the comb drive, a sensitivity of 3.2 nA change in drain current per volt of ac drive voltage were observed at a dc bias of 38 V. Significant improvement in device performance are possible with changes in device design. This, to our knowledge, is the first report on the operation of a LMGFET with a driven gate.

Paper Details

Date Published: 16 August 2001
PDF: 8 pages
Proc. SPIE 4334, Smart Structures and Materials 2001: Smart Electronics and MEMS, (16 August 2001); doi: 10.1117/12.436609
Show Author Affiliations
Pratul K. Ajmera, Louisiana State Univ. (United States)
In-Hyouk Song, Louisiana State Univ. (United States)

Published in SPIE Proceedings Vol. 4334:
Smart Structures and Materials 2001: Smart Electronics and MEMS
Vijay K. Varadan, Editor(s)

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