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Proceedings Paper

Temperature characteristics of silicon avalanche photodiodes
Author(s): Iwona Wegrzecka; Maria Grynglas; Maciej Wegrzecki; Jan Bar; Remigiusz Grodecki
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Paper Abstract

The paper presents the results of studies on temperature dependence of such parameters as a dark current, noise current, gain, noise equivalent power and detectivity of silicon epiplanar avalanche photodiodes at the ITE. The photodiode reach-through structure is of an nPLU-p-(pi) - p+ type with an under-contact ring and a channel stopper. The temperature range was stretching from -40 C to +40 C. Specially developed for this purpose an automatic system for low noise measurements was used. A two- stage micro-cooler with a Peltier's element was applied to control and stabilize the temperature of measured structures.

Paper Details

Date Published: 8 August 2001
PDF: 8 pages
Proc. SPIE 4516, Optoelectronic and Electronic Sensors IV, (8 August 2001); doi: 10.1117/12.435922
Show Author Affiliations
Iwona Wegrzecka, Institute of Electron Technology (Poland)
Maria Grynglas, Institute of Electron Technology (Poland)
Maciej Wegrzecki, Institute of Electron Technology (Poland)
Jan Bar, Institute of Electron Technology (Poland)
Remigiusz Grodecki, Institute of Electron Technology (Poland)

Published in SPIE Proceedings Vol. 4516:
Optoelectronic and Electronic Sensors IV
Jerzy Fraczek, Editor(s)

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