Proceedings Paper
Very high quality crystals of wide-gap II-VI semiconductors: What for?| Format | Member Price | Non-Member Price |
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Paper Abstract
A review of some of the most important applications of the wide-gap II-VI semiconductors is presented, the key parameters of the crystals for specific applications are emphasized, and the necessity of growing crystals of very high quality is substantiated. Modern methods of growth of high-quality wide-gap II-VI semiconductor crystals are shortly descried. The results of the physical vapor transport method, chosen by the authors for ZnTe and CdZnTe crystals are shown.
Paper Details
Date Published: 10 August 2001
PDF: 8 pages
Proc. SPIE 4412, International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals, (10 August 2001); doi: 10.1117/12.435854
Published in SPIE Proceedings Vol. 4412:
International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals
Antoni Rogalski; Krzysztof Adamiec; Pawel Madejczyk, Editor(s)
PDF: 8 pages
Proc. SPIE 4412, International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals, (10 August 2001); doi: 10.1117/12.435854
Show Author Affiliations
Andrzej Mycielski, Institute of Physics (Poland)
A. Szadkowski, Institute of Physics (Poland)
A. Szadkowski, Institute of Physics (Poland)
W. Kaliszek, Institute of Physics (Poland)
B. Witkowska, Institute of Physics (Poland)
B. Witkowska, Institute of Physics (Poland)
Published in SPIE Proceedings Vol. 4412:
International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals
Antoni Rogalski; Krzysztof Adamiec; Pawel Madejczyk, Editor(s)
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