Effect of intentionally created oxygen-related structural defects on generation of thermal donors, TDs in Cz-Si treated at 720K under enhanced hydrostatic pressure of gas ambient, HP, up to 1.5 GPa was investigated. The as-grown Cz-Si samples with initial interstitial oxygen content up to 1.2 X 10¹⁸ cm^-3 as well as that pre-annealed at 720-1020 K - 10⁵ Pa for up to 170 h, indicate strongly HP - dependent increase of electron concentration in the conduction band after the HT-HP treatment at 720 K for 2-20 h. This confirms the stress-stimulated creation of TDs. HP-induced creation of TDs was much weaker after pre- annealing at 920-1020 K while not detected for the samples containing extended defects. Qualitative explanation of observed phenomena was proposed.

Date Published: 10 August 2001
PDF: 6 pages
Proc. SPIE 4412, International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals, (10 August 2001); doi: 10.1117/12.435805

Published in SPIE Proceedings Vol. 4412:
International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals
Antoni Rogalski; Krzysztof Adamiec; Pawel Madejczyk, Editor(s)