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Proceedings Paper

Photoresist thickness variation due to local and global topography
Author(s): Jin-Young Kim; Heungin Bak; Young-Soo Sohn; Ilsin An; Kyoung-Yoon Bang; Hye-Keun Oh; Woo-Sung Han
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Paper Abstract

The control of photoresist thickness and uniformity is becoming more crucial factor as the wafer size increases and the minimum feature size decreases since the variation of resist thickness could affect the critical dimension variation. In general, spin coating technique is used to coat photoresist on a wafer. To obtain the wet resist thickness profile around a topographical feature, the analytical solution derived from mass continuity and lubrication approximation was used. Under the same spin coating condition, the formations of distributed photoresist were different among the shape and size of topology. The final dried resist thickness profile was obtained by applying the resist thickness reduction due to evaporation during soft bake. The photoresist thickness and distribution on an isolated topology were compared with those of a periodic topology. In case of periodic topology, the photoresist thickness and distribution are dependent on topology density. The resultant thickness variations were applied to our simulation tool to determine the line width variations around the topological feature. We found that the difference in resist thickness due to topography could induce a severe line width variation. Mask bias or other correctional method is necessary to get the desired line width for the whole area around the topology.

Paper Details

Date Published: 14 September 2001
PDF: 12 pages
Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); doi: 10.1117/12.435798
Show Author Affiliations
Jin-Young Kim, Hanyang Univ. (South Korea)
Heungin Bak, Hanyang Univ. (South Korea)
Young-Soo Sohn, Hanyang Univ. (South Korea)
Ilsin An, Hanyang Univ. (South Korea)
Kyoung-Yoon Bang, Hanyang Univ. (South Korea)
Hye-Keun Oh, Hanyang Univ. (South Korea)
Woo-Sung Han, Samsung Electronics Co., Ltd. (South Korea)

Published in SPIE Proceedings Vol. 4346:
Optical Microlithography XIV
Christopher J. Progler, Editor(s)

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