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Proceedings Paper

Improvement of metal photo process margin with OPC and CMP for 0.14 um DRAM technology node and beyond
Author(s): Dong-il Bae; Jun-Sik Bae; Seung-Won Sung; Ji-Soong Park; Sang-Uhk Rhie; Dong-Won Shin; Tae-Young Chung; Kinam Kim
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Paper Abstract

In this paper, we report highly effective Optical Proximity Correction (OPC) techniques to improve the process margin in the photo lithography process of metal layer, which can be applied to 0.14 micrometer DRAM technology node and beyond. The proposed test pattern reflects the optical limitation of each situation, the rules can be established by simply investigating the test patterns which solves the problems such as lack of contact overlap margin, line-end shortening, and size reduction in isolated and island patterns. This sophisticated rule is considering the vertical environment as well. Thanks to systematic sequence for rule extraction, we could minimize additional burdens such as error occurrence, rule set-up time, data volume, manufacturing time of mask. By applying this method, DOF margin of metal layer could be improved from 0.4 micrometer to beyond 0.6 micrometer, which provides sufficient process window for mass production of 0.14 micrometer DRAM technology. In addition, we also confirmed that the new OPC technology could be extended to the metal layer of 0.11 micrometer DRAM.

Paper Details

Date Published: 14 September 2001
PDF: 11 pages
Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); doi: 10.1117/12.435684
Show Author Affiliations
Dong-il Bae, Samsung Electronics Co., Ltd. (South Korea)
Jun-Sik Bae, Samsung Electronics Co., Ltd. (South Korea)
Seung-Won Sung, Samsung Electronics Co., Ltd. (South Korea)
Ji-Soong Park, Samsung Electronics Co., Ltd. (South Korea)
Sang-Uhk Rhie, Samsung Electronics Co., Ltd. (South Korea)
Dong-Won Shin, Samsung Electronics Co., Ltd. (South Korea)
Tae-Young Chung, Samsung Electronics Co., Ltd. (South Korea)
Kinam Kim, Samsung Electronics Co., Ltd. (South Korea)

Published in SPIE Proceedings Vol. 4346:
Optical Microlithography XIV
Christopher J. Progler, Editor(s)

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