Photoemission from quantum wells, inversion layers, quantum well wires, and quantum dots of nonlinear optical materials has been studied using n-CdGeAs₂ as an example. Photoemission was formulated by deducing the dispersion law within the framework of the k-p formalism taking into account all types of anisotropies of the energy band parameters. Photoemission is found to increase with incident photon energy in a ladderlike manner and to exhibit an oscillatory dependence on changing film thickness, surface fields at both high and weak electric field limits, and the carrier density. It is concluded that the numerical values of the photoemission are the greatest in quantum dots and the smallest in bulk specimens.

Date Published: 1 June 1991
PDF: 30 pages
Proc. SPIE 1409, Nonlinear Optics II, (1 June 1991); doi: 10.1117/12.43565

Published in SPIE Proceedings Vol. 1409:
Nonlinear Optics II
Robert A. Fisher; John F. Reintjes, Editor(s)