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Proceedings Paper

193 lithography and RELACS processing for BEOL lithography
Author(s): Ronald DellaGuardia; Karen E. Petrillo; Jia Chen; Paul Rabidoux; Timothy J. Dalton; Steven J. Holmes; Linda M. Hadel; K. Malone; Arpan P. Mahorowala; S. Greco; Richard A. Ferguson
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Paper Abstract

This paper presents data obtained in developing a process using 193 nm lithography and the RELACS contact hole shrink technique. For the line/space levels, process windows showing resist performance using chrome on glass masks are presented. Data showing feature size linearity and the requirements for optical proximity correction (OPC) are presented. Some of the OPC trends observed are discussed and compared to results obtained using 248 nm lithography. Image shortening data also compares the results obtained in 193 and 248 lithography. Etch results for the new 193 resists are given and show the etch resistance of this relatively new class of photoresist materials. For contact hole and via levels, results using 193 lithography and COG masks show the importance of the mask error enhancement factor (MEEF), print bias and resolution. Due to the relative immaturity and performance of contact hole resists for 193 lithography, Clariant's RELACS process was investigated with 248 nm resists. In this process contact holes are printed larger than required and then reduced to the desired size by a chemical shrink process. Results obtained with 248 lithography using state of the art resists and phase shift masks are discussed. It was found that 140 nm contact holes with at least 0.5 micrometer depth of focus could be obtained. Cross sections and process windows are shown.

Paper Details

Date Published: 14 September 2001
PDF: 12 pages
Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); doi: 10.1117/12.435636
Show Author Affiliations
Ronald DellaGuardia, IBM Corp. (United States)
Karen E. Petrillo, IBM Corp. (United States)
Jia Chen, IBM Corp. (United States)
Paul Rabidoux, IBM Corp. (United States)
Timothy J. Dalton, IBM Corp. (United States)
Steven J. Holmes, IBM Corp. (United States)
Linda M. Hadel, IBM Corp. (United States)
K. Malone, IBM Corp. (United States)
Arpan P. Mahorowala, IBM Corp. (United States)
S. Greco, IBM Corp (United States)
Richard A. Ferguson, IBM Corp. (United States)

Published in SPIE Proceedings Vol. 4346:
Optical Microlithography XIV
Christopher J. Progler, Editor(s)

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