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Proceedings Paper

Electrical and transport characteristics of doped Bi12TiO20 photorefractive single crystals
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Paper Abstract

Bi12TiO20 single crystals doped with Cd, Cu, P, Cr, Ag, Al were grown by the top-seeded solution growth method (TSSG). The electrical measurements were carried out on different BTO samples. The electrical conductivity followed the Arrhenius low, with an activation energy ranged from 0.38 to 0.63 eV. Mobility and transport properties of charge photo carriers were investigated by the time-of-flight technique. For non-doped BTO and doped with Cu, P, Al and Cd the obtained values for drift mobility of electrons varying between (mu) equals10-2 and 1 [cm2/V.s]. In the case of BTO doped with Al the dominant charge carriers were holes with mobility (mu) equals5x10-3 [cm2/V.s]. These key photorefractive parameters were used to calculate the lifetime of charge carriers using the period of the recorded holographic photorefractive space gratings.

Paper Details

Date Published: 29 June 2001
PDF: 5 pages
Proc. SPIE 4430, ROMOPTO 2000: Sixth Conference on Optics, (29 June 2001); doi: 10.1117/12.432880
Show Author Affiliations
Vera Marinova, Central Lab. of Optical Storage and Processing of Information (Bulgaria)
Ventseslav Christov Sainov, Central Lab. of Optical Storage and Processing of Information (Bulgaria)

Published in SPIE Proceedings Vol. 4430:
ROMOPTO 2000: Sixth Conference on Optics
Valentin I. Vlad, Editor(s)

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