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Proceedings Paper

New approach for tunable quantum well wire lasers
Author(s): Fanyao Qu; N. O. Dantas; P. C. Morais
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Paper Abstract

A new approach for operation of tunable lasers based on quantum well wires is proposed. The laser operation uses the effect of an intense, long-wavelength laser field radiation applied to the semiconductor device. Different geometry's concerning the shape and size of the semiconductor quantum structure as well as the orientation of the applied laser field with respect to the quantum device was considered. We calculate the laser-dressed quantum well wire (QWW) potential energy, in the frame of the nonperturbative theory and finite difference method. Then, we show that when the intense, long-wavelength laser field radiation, is applied to the semiconductor-based quantum well wire device a significant optical Stark effect is observed for the bound state energy. Furthermore, under the action of the laser-dressed potential, a strong enhancement of the blue shift occurs for the electron-heavy hole recombination processes as the QWW lateral size is reduced. This effect may provide full control of the frequency operation of QWW-based lasers and thus would be of great help in tailoring the physical parameters of the semiconductor QWW device.

Paper Details

Date Published: 9 July 2001
PDF: 6 pages
Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); doi: 10.1117/12.432621
Show Author Affiliations
Fanyao Qu, Univ. Federal de Uberlandia (Brazil)
N. O. Dantas, Univ. Federal de Uberlandia (Brazil)
P. C. Morais, Univ. de Brasilia (Brazil)

Published in SPIE Proceedings Vol. 4283:
Physics and Simulation of Optoelectronic Devices IX
Yasuhiko Arakawa; Peter Blood; Marek Osinski, Editor(s)

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