Share Email Print

Proceedings Paper

Physical modeling of high-speed PIN photodetectors
Author(s): P. Douglas Yoder
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Conventional models of the time response of avalanche photodiodes (APDs) assume that carriers travel uniformly at their saturated drift velocity, vsat. To test the validity of this drift velocity assumption (DVA) the model was used to compute the distribution of exit times of electrons generated in an avalanche pulse and the results were compared with those of Monte-Carlo (MC) simulations. The comparison demonstrates that, while the DVA is valid for thick (1um) avalanching regions, it does not take account of non-equilibrium effects which occur in thin avalanching regions, nor of the effects of diffusion. As a consequence, the DVA model may increasingly underestimate the speed of APDs as the width of the avalanche region is reduced.

Paper Details

Date Published: 9 July 2001
PDF: 12 pages
Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); doi: 10.1117/12.432601
Show Author Affiliations
P. Douglas Yoder, Agere Systems (United States)

Published in SPIE Proceedings Vol. 4283:
Physics and Simulation of Optoelectronic Devices IX
Yasuhiko Arakawa; Peter Blood; Marek Osinski, Editor(s)

© SPIE. Terms of Use
Back to Top