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Proceedings Paper

Optical properties of GaInNAs/GaAs laser structures
Author(s): Dimitrios A. Alexandropoulos; Michael J. Adams
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Paper Abstract

We present calculations of the optical properties of GaInNAs/GaAs quantum wells. In particular, we have estimated the spectral form of the material gain based on the Band Anti-Crossing (BAC) model. The electron effective mass and the conduction band density of states are calculated from the dispersion relation derived in the context of the BAC model. The effect of nitrogen on the valence band is considered to be minimal. Based on these gain calculations, we have derived the dispersion of the linewidth enhancement factor. In the light of these results we discus the limitations of the BAC model.

Paper Details

Date Published: 9 July 2001
PDF: 12 pages
Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); doi: 10.1117/12.432590
Show Author Affiliations
Dimitrios A. Alexandropoulos, Univ. of Essex (United Kingdom)
Michael J. Adams, Univ. of Essex (United Kingdom)

Published in SPIE Proceedings Vol. 4283:
Physics and Simulation of Optoelectronic Devices IX
Yasuhiko Arakawa; Peter Blood; Marek Osinski, Editor(s)

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