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Proceedings Paper

Temperature dependence of threshold current: a better criterion than T0?
Author(s): Tim J. Houle; Alexander I. Onischenko; Judy M. Rorison; Richard V. Penty; Ian H. White; Anthony J. SpringThorpe; J. Kenton White; Paul Paddon; T. Garanzotis
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Paper Abstract

Experimental measurements of threshold current density as a function of temperature have been analyzed in terms of the characteristic temperature, T0, and temperature gradient (Delta) TJth equals (delta) Jth/(delta) T, for a number of semiconductor laser device structures. These include AlInGaAs/InP, InGaAsP/InP, and AlGaAs/GaAs. A theoretical model is used to investigate the possible loss mechanisms in laser diodes that cause the superlinear increase of threshold current with temperature. The characteristic temperature T0 is found to vary with temperature and device length, thus making it somewhat misleading when quoted without qualification. A different approach based on plotting ln((Delta) TJth) vs. ln(Jth) shows a linear relationship that is dependent on device structure only, allowing the use of a new figure of merit for the temperature performance of semiconductor lasers.

Paper Details

Date Published: 9 July 2001
PDF: 9 pages
Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); doi: 10.1117/12.432571
Show Author Affiliations
Tim J. Houle, Univ. of Bristol (United Kingdom)
Alexander I. Onischenko, Univ. of Bristol (United Kingdom)
Judy M. Rorison, Univ. of Bristol (United Kingdom)
Richard V. Penty, Univ. of Bristol (United Kingdom)
Ian H. White, Univ. of Bristol (United Kingdom)
Anthony J. SpringThorpe, Nortel Networks (Canada)
J. Kenton White, Nortel Networks (Canada)
Paul Paddon, Nortel Networks (Canada)
T. Garanzotis, Nortel Networks (Canada)

Published in SPIE Proceedings Vol. 4283:
Physics and Simulation of Optoelectronic Devices IX
Yasuhiko Arakawa; Peter Blood; Marek Osinski, Editor(s)

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