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Proceedings Paper

Pulsed-laser deposition of nanometric and micrometric films for optoelectronic applications
Author(s): M. L. De Giorgi; L. Elia; M. Fernandez; Gilberto Leggieri; Armando Luches; Maurizio Martino; A. Zocco
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Paper Abstract

We ablated Si, SIO and ITO targets in low-pressure O2 with XeCl and KrF laser pulses at fluences of 5-8 J/cm2. The films were deposited on Si and glass substrates at temperatures of 20-600 degrees C. The substrates were generally set parallel to the target. To reduce droplet deposition, some films were deposited in off-axis configuration or using the so-called 'eclipse method', characterized by a shadow mask between target and substrate. Dense, continuos ITO films with resistivity as low as 1.6 by 10-4 (Omega) cm and a high transparency in the visible region were deposited. Ultra-thin films were deposited and successfully used as electrodes in optoelectronic devices. Dense, stoichiometric, thick SiO2 films were deposited on substrates either at room temperature or heated at moderate temperatures. Droplet density and surface roughness are kept quite low by using special deposition configurations. It results that multi- component films like ITO and silica can be efficiently deposited by using the reactive pulsed laser deposition.

Paper Details

Date Published: 26 June 2001
PDF: 10 pages
Proc. SPIE 4423, Nonresonant Laser-Matter Interaction (NLMI-10), (26 June 2001); doi: 10.1117/12.431212
Show Author Affiliations
M. L. De Giorgi, INFM and Univ. degli Studi di Lecce (Italy)
L. Elia, INFM and Univ. degli Studi di Lecce (Italy)
M. Fernandez, INFM and Univ. degli Studi di Lecce (Italy)
Gilberto Leggieri, INFM and Univ. degli Studi di Lecce (Italy)
Armando Luches, INFM and Univ. degli Studi di Lecce (Italy)
Maurizio Martino, INFM and Univ. degli Studi di Lecce (Italy)
A. Zocco, INFM and Univ. degli Studi di Lecce (Italy)

Published in SPIE Proceedings Vol. 4423:
Nonresonant Laser-Matter Interaction (NLMI-10)
Mikhail N. Libenson, Editor(s)

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