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Proceedings Paper

Laser annealing of MBE Ge films on the Si substrates
Author(s): Valerii P. Aksenov; G. N. Mikhailova; Johannes Boneberg; Paul Leiderer; H.-J. Muenzer
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Paper Abstract

We report the studies of process of laser annealing of island Ge films on the SI substrates. Based on the time- resolved reflectivity measurements, we obtained the data concerning melting, the dissolution and the resolidification of Ge thin films on the SI after laser annealing with nanosecond laser pulse We observed periodic melting of the interface Ge-Si under an illumination by series of laser pulses that connected with the peculiarity of the solution Ge in Si.

Paper Details

Date Published: 26 June 2001
PDF: 3 pages
Proc. SPIE 4423, Nonresonant Laser-Matter Interaction (NLMI-10), (26 June 2001); doi: 10.1117/12.431202
Show Author Affiliations
Valerii P. Aksenov, General Physics Institute (Russia)
G. N. Mikhailova, General Physics Institute (Russia)
Johannes Boneberg, Univ. of Konstanz (Switzerland)
Paul Leiderer, Univ. of Konstanz (Germany)
H.-J. Muenzer, Univ. of Konstanz (Germany)

Published in SPIE Proceedings Vol. 4423:
Nonresonant Laser-Matter Interaction (NLMI-10)
Mikhail N. Libenson, Editor(s)

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