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Proceedings Paper

Carrier confinement in strain-compensated InGaAs/GaAsP quantum well laser with temperature-insensitive threshold
Author(s): Wataru Susaki; Hiroyuki Yaku; Toshiro Hayakawa; Toshiaki Fukunaga; Hideki Asano
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Paper Abstract

Temperature insensitive threshold current in strain- compensated-(InxGa1-xAs/GaAsP) SQW-lasers with x X 0.3 is investigated by changing x equals 0.2, 0.25 and 0.3 by the spectral measurement and the threshold carrier density determined by lasing delay. Large energy separation between the heavy and the light hole subbands due to the highly compressive strain makes it not to exist the light hole subbands in the quantum well, which is confirmed by the induced Raman scattering spectral above threshold. Injected holds are almost contained in the heavy hole subbands, and injected electrons are also contained in the electron subbands at threshold in these lasers at room temperature.

Paper Details

Date Published: 6 June 2001
PDF: 12 pages
Proc. SPIE 4287, In-Plane Semiconductor Lasers V, (6 June 2001);
Show Author Affiliations
Wataru Susaki, Osaka Electro-Communication Univ. (Japan)
Hiroyuki Yaku, Osaka Electro-Communication Univ. (Japan)
Toshiro Hayakawa, Fuji Photo Film Co., Ltd. (Japan)
Toshiaki Fukunaga, Fuji Photo Film Co., Ltd. (Japan)
Hideki Asano, Fuji Photo Film Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 4287:
In-Plane Semiconductor Lasers V
Luke J. Mawst; Ramon U. Martinelli, Editor(s)

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