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Proceedings Paper

High-quality GaInNAs active layers for 1.3-um lasers
Author(s): Takeshi Kitatani; Masahiko Kondow; Toshiaki Tanaka
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Paper Abstract

Since we first proposed the use of GaInNAs active layers to improve the high-temperature performance of long wavelength lasers in 1995, this material has been intensively investigated by many research groups and several promising results have been reported. We have used gas-source molecular beam epitaxy with N-radicals as a N-source for GaInNAs growth, and improved the crystal quality by optimizing the growth condition. Our growth method has the advantages of relative low temperature growth and a high N- radical sticking coefficient compared to metal organic chemical vapor deposition with Dimethylhydrazine. The effects of thermal annealing on the optical properties of GaInNAs layers have also been investigated. In-situ thermal annealing at temperatures above 550 degree(s)C was found to greatly enhance the photoluminescence intensity of GaInNAs. By optimizing both the crystal growth and thermal annealing conditions, we made a 1.3-micrometers GaInNAs/GaAs single-quantum- well laser that has a high characteristic temperature over 200 K and offers life time over 1000 hours. Therefore, we expect GaInNAs lasers to be put into practical use in the near future.

Paper Details

Date Published: 6 June 2001
PDF: 8 pages
Proc. SPIE 4287, In-Plane Semiconductor Lasers V, (6 June 2001); doi: 10.1117/12.429796
Show Author Affiliations
Takeshi Kitatani, Hitachi, Ltd. (Japan)
Masahiko Kondow, Hitachi, Ltd. (Japan)
Toshiaki Tanaka, Hitachi, Ltd. (Japan)


Published in SPIE Proceedings Vol. 4287:
In-Plane Semiconductor Lasers V
Luke J. Mawst; Ramon U. Martinelli, Editor(s)

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